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2000-05-29 page 1 SPW17N80C2 preliminary data cool mos? power transistor c power semiconductors o o l mos feature new revolutionary high voltage technology worldwide best r ds ( on ) in to 247 ultra low gate charge periodic avalanche rated extreme d v /d t rated ultra low effective capacitances product summary v ds 800 v r ds(on) 290 m w i d 17 a p-to247 type package ordering code SPW17N80C2 p-to247 q67040-s4359 marking SPW17N80C2 maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit continuous drain current t c = 25 c t c = 100 c i d 17 11 a pulsed drain current, t p limited by t jmax i d puls 51 avalanche energy, single pulse i d =4a, v dd =50v e as 670 mj avalanche energy, repetitive t ar limited by t jmax 1) i d =17a, v dd =50v e ar 0.5 avalanche current, repetitive t ar limited by t j max i ar 17 a reverse diode d v /d t i s =17a, v ds < v dd , d i /d t =100a/s, t jmax =150c d v /d t 6 v/ns gate source voltage v gs 20 v power dissipation t c = 25 c p tot 208 w operating and storage temperature t j , t st g -55... +150 c
2000-05-29 page 2 SPW17N80C2 preliminary data thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 0.6 k/w thermal resistance, junction - ambient, leaded r thja - - 62 linear derating factor - - 1.67 w/k soldering temperature, 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics , at t j = 25 c, unless otherwise specified static characteristics drain-source breakdown voltage v gs =0v, i d =0.25ma v (br)dss 800 - - v drain-source avalanche breakdown voltage v gs =0v, i d =17a v (br)ds - 870 - gate threshold voltage, v gs = v ds i d =1ma v gs(th) 2 3 4 zero gate voltage drain current v ds = 800 v, v gs = 0 v, t j = 25 c v ds = 800 v, v gs = 0 v, t j = 150 c i dss - - 0.5 - 25 250 a gate-source leakage current v gs =20v, v ds =0v i gss - - 100 na drain-source on-state resistance v gs =10v, i d =11a, t j =25c r ds(on) - 250 290 m w gate input resistance f = 1 mhz, open drain r g - 0.7 - w 1 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f .
2000-05-29 page 3 SPW17N80C2 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 3 2* i d * r ds(on)max , i d =11a - 15 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 2320 - pf output capacitance c oss - 1250 - reverse transfer capacitance c rss - 60 - effective output capacitance, 1) energy related c o(er) v gs =0v, v ds =0v to 640 v - 59 - pf effective output capacitance, 2) time related c o(tr) - 124 - turn-on delay time t d(on) v dd =400v, v gs =0/10v, i d =17a, r g =5.6 w , t j =125c - 45 - ns rise time t r - 17 - turn-off delay time t d(off) - 77 88 fall time t f - 10 13 gate charge characteristics gate to source charge q gs v dd =640v, i d =17a - 9 - nc gate to drain charge q gd - 42 - gate charge total q g v dd =640v, i d =17a, v gs =0 to 10v - 83 107 gate plateau voltage v (plateau) v dd =640v, i d =17a - 6 - v 1 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 2 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2000-05-29 page 4 SPW17N80C2 preliminary data electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. reverse diode inverse diode continuous forward current i s t c =25c - - 17 a inverse diode direct current, pulsed i sm - - 51 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =400v, i f = i s , d i f /d t =100a/s - 550 - ns reverse recovery charge q rr - 13 - c peak reverse recovery current i rrm - 40 - a peak rate of fall of reverse recovery current di rr / dt - 1200 - a/s transient thermal characteristics symbol value unit symbol value unit typ. typ. transient thermal impedance thermal resistance r th1 0.00716 k/w r th2 0.01 r th3 0.022 r th4 0.065 r th5 0.083 r th6 0.038 thermal capacitance c th1 0.000441 ws/k c th2 0.0014 c th3 0.000985 c th4 0.0045 c th5 0.02 c th6 0.146 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
2000-05-29 page 5 SPW17N80C2 preliminary data 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 20 40 60 80 100 120 140 160 180 200 w 240 SPW17N80C2 p tot 2 drain current i d = f ( t c ) parameter: v gs 3 10 v 0 20 40 60 80 100 120 c 160 t c 0 2 4 6 8 10 12 14 a 18 SPW17N80C2 i d 4 transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w SPW17N80C2 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -1 10 0 10 1 10 2 10 a SPW17N80C2 i d r d s ( o n ) = v d s / i d dc 10 ms 1 ms 100 s 10 s t p = 6.7 s
2000-05-29 page 6 SPW17N80C2 preliminary data 5 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 30 35 40 45 50 55 60 a 70 i d 5v 6v 7v 8v 20v 10v 6 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 5 10 15 20 v ds 30 v 0 5 10 15 20 25 a 35 i d 4v 4.5v 5v 5.5v 6v 6.5v 20v 10v 8v 7v 7 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 5 10 15 20 25 v ds 35 v 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 a 1.5 i d 4v 4.5v 5v 5.5v 6v 6.5v 7v 8v 10v 20v 8 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 11 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 w 1.6 SPW17N80C2 r ds(on) typ 98%
2000-05-29 page 7 SPW17N80C2 preliminary data 9 typ. transfer characteristics i d = f ( v gs ); v ds 3 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 5 10 15 20 25 30 35 40 45 50 55 a 65 i d 25c 150c 10 gate threshold voltage v gs(th) = f ( t j ) parameter: v gs = v ds , i d = 1 ma -60 -20 20 60 100 c 160 t j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v 5.0 v gs(th) min. typ. max. 11 typ. gate charge v gs = f ( q gate ) parameter: i d = 17 a pulsed 0 20 40 60 80 100 nc 140 q gate 0 2 4 6 8 10 12 v 16 SPW17N80C2 v gs 0,8 v ds max ds max v 0,2 12 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v 3.0 v sd -1 10 0 10 1 10 2 10 a SPW17N80C2 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%)
2000-05-29 page 8 SPW17N80C2 preliminary data 14 avalanche energy e as = f ( t j ) par.: i d = 4 a, v dd = 50 v 25 50 75 100 c 150 t j 0 50 100 150 200 250 300 350 400 450 500 550 600 mj 700 e as 13 avalanche soa i ar = f ( t ar ) par.: t j 150 c 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4 s t ar 0 2 4 6 8 10 12 14 a 18 i ar t j (start) =125c t j (start) =25c 15 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 720 740 760 780 800 820 840 860 880 900 920 940 v 980 SPW17N80C2 v (br)dss 16 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 mhz f 0 50 100 150 200 250 300 350 400 w 500 p ar
2000-05-29 page 9 SPW17N80C2 preliminary data 17 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 500 600 v 800 v ds 0 10 1 10 2 10 3 10 4 10 5 10 pf c c iss c oss c rss 18 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 500 600 v 800 v ds 0 2 4 6 8 10 12 14 j 18 e oss definition of diodes switching characteristics
2000-05-29 page 10 SPW17N80C2 preliminary data to-247 symbol [mm] [inch] min max min max a 4.78 5.28 0.1882 0.2079 b 2.29 2.51 0.0902 0.0988 c 1.78 2.29 0.0701 0.0902 d 1.09 1.32 0.0429 0.0520 e 1.73 2.06 0.0681 0.0811 f 2.67 3.18 0.1051 0.1252 g h 20.80 21.16 0.8189 0.8331 k 15.65 16.15 0.6161 0.6358 l 5.21 5.72 0.2051 0.2252 m 19.81 20.68 0.7799 0.8142 n 3.560 4.930 0.1402 0.1941 ? p 3.61 0.1421 q 6.12 6.22 0.2409 0.2449 0.76 max dimensions 0.0299 max
2000-05-29 page 11 SPW17N80C2 preliminary data published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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